Quantum Hall Resistance Characterization Chamber

At NIST, I was tasked with designing a mobile chamber for rapidly characterizing graphene arrays, which are used to realize the quantum resistance standard.

Graphene, due to its 2-D nature, has an incredibly high carrier capacity, and when subjected to a very low temperature (<1 K) and very high magnetic field (stable plateaus found at >9 T), can be used to generate a quantized hall effect, yielding a discrete resistance.

The device would house a graphene array on a TO-8 socket inside an aluminum housing. The base of the socket is connected to an insertion heater wired to a PID that was wired and tuned by me as well. Above the TO-8 was an electromagnet used to generate a magnetic field, which when coupled with a programmable Josephson Voltage Standard could be used to accurately measure resistance across the graphene arrays to test for doping.